A systematic method for simulating total ionizing dose effects using the finite elements method
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چکیده
منابع مشابه
A systematic method for simulating total ionizing dose effects using the finite elements method
Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys Sentaurus platform are systematically simulated. Carriers are generated in the oxide and are transported out through a direct contact with the ga...
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Three-dimensional Finite Elements Method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs
Finite Elements Method simulation of Total Ionizing Dose effects on 22 nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD are presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400 nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibra...
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ژورنال
عنوان ژورنال: Journal of Computational Electronics
سال: 2017
ISSN: 1569-8025,1572-8137
DOI: 10.1007/s10825-017-1027-2